Description
As a Verification Designer at Micron's Shanghai Design Center, you will work in a highly innovative and motivated design team using state of the art memory technologies to develop & verify the most advanced DRAM product.
You will be challenged by the complexity and difficulty of designing/verifying the high density memory chip (up to 8Gb) with huge scale of circuit capability (over 4M transistors), ultra high speed (clock cycle is less than 1ns), complicated functionality (DDR4, LPDDR
4), advanced low power and power management technology.
You will need to have the ability to work as a design verification engineer and consider as a circuit designer to full evaluate chip or block level functionality and provide solution.
You will work closely with Micron's various design teams all over the world to contribute to the success of the design team by applying verification tools and techniques, providing verification status and summaries to specific designs as needed.
You may need to travel to Japan and U.S. in short term for technical communication, project support.
You will participate in developing digital/analog mix-signal verification methodology for advanced DRAM products, as well as design and implementation of mix-signal design verification environment.
As an important part of responsibility, you will develop and maintain test benches and test vectors using digital and analog simulation tools.
Responsibilities
Develop patterns and regressions to increase the function coverage for all DRAM architectures and features.
Provide support to design engineers, simulate, analyze and debug current chip designs.
Co-work with international colleagues on developing new verification tools and flows for the verification difficulties on DRAM chip.
Requirements
Basic understanding of CMOS circuit design
Familiar with analog/digital simulation tools, ie. HSPICE, HSIM, VerilogHDL, FINESIM
Must possess good communication skills and ability to work well in a team
Experience in SV, VPI coding preferred
Gate Level circuit design preferred
Experience in UVM Test Bench preferred
Previous work experience in DRAM memory related fields a plus
English language skill in writing and speaking is a must
Education BS or MS in Electrical Engineering is required
All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status.For US Sites Only: To request assistance with the application process and/or for reasonable accommodations, please contact Micron’s Human Resources Department and/or by completing our General Contact Form
[[https://www.micron.com/forms/contact-us]]
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